![]() ![]() Our tool can characteristically accommodate from sized sample to 200 mm wafers. This system utilises the Advanced Silicon Etch (ASE) Technology, based on the Bosch process, to achieve rapid and very deep silicon etch profile with smooth sidewall. Wet etching provides a simple and cheap method of pattern transfer after lithography. High resolution pattern transfer features from micron to nanoscale is done through reactive gas chemistry and plasma etch technology. STS LPX Pegasus - Configured for fluorine-based chemistry to etch silicon-based materials.The Southampton Nanofabrication Centre has an extensive range of dry etch systems and wet etching competences for various research interests in silicon processing, metal etching, dielectric machining, thin film processing and other semiconductor materials (Type II, III, V, and N).This etching process is particularly suitable for silicon-based MEMS and NEMS devices where anisotropic profiles are essential. This system utilises the Advanced Silicon Etch (ASE) Technology, based on the Bosch process, to achieve very deep silicon etch profile and smooth sidewall. Plasmalab system 100 plus#Ionfab 300 plus - Configured for MEMS and NEMS structures, silicon-based material, silica, quartz and deep etch structures.The system can handle up to 200 mm diameter wafer and sample can be tilted to perform angular etch. This can achieve very high aspect ratio profiles, high etch rate and uniformity over a large sample. Working on the similar principle as the reactive ion etcher but is assisted by an energised ion beam for the etching mechanism. Ideal for metal etching, poly-silicon gate, platinum, III-V and III-N based semiconductor materials. Plasmalab System 100 - Chlorine/bromine-based chemistry etching.Ideal for deep oxide etching, BPSG, TEOS, rare earth oxide, poly-silicon, polymer and diamond based material. Plasmalab System 100 - Fluorine-based chemistry etching.In addition, the systems can operate in ICP or RIE mode separately. ![]() The results are high etch rate, high aspect ratio, and anisotropic etching of material of the samples. The etching plasma is created by an RIE RF source and RF induction magnetic coil to produce high plasma densities. Ideal for metal etching and suitable for III-V semiconductor materials.
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